MXD6888K概述：

MXD6888K是VDS=60V,ID=80A，RDS(ON)(Typ.)=6.8mΩ@VGS=10V的N沟道MOSFET.MXD6888K的丝印是6888K.MXD6888K提供TO-252-2L封装。

The MXD6888K is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

MXD6888K特性：

VDS=60V, ID=80A

RDS(ON)(Typ.)=6.8mΩ @ VGS=10V

Special Designed for E-Bike Controller Application

Ultra Low On-Resistance

High UIS and UIS 100% Test

MXD6888K应用：

Power Switching Application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

MXD6888K典型应用及引脚图：