矽源特PED645K概述：

(相关资料图)

矽源特PED645K是VDS=18V，ID=10A，RDS(ON)<6.5mΩ@VGS=4.5V，RDS(ON)<7mΩ@VGS=3.8V，RDS(ON<8.5mΩ@VGS=2.5V的N沟道MOSFET。矽源特PED645K的丝印是645K，矽源特PED645K提供DFN3x3-8L封装。

The 矽源特PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

矽源特PED645K特性：

VDS = 18V, ID = 10A

RDS(ON) < 6.5mΩ @VGS=4.5V

RDS(ON) < 7mΩ@VGS=3.8V

RDS(ON) < 8.5mΩ @VGS=2.5V

ESD Rating: 2000V HBM

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

矽源特PED645K应用：

PWM applications

Load switch

Power management

Battery protection

矽源特PED645K典型应用及引脚：

矽源特PED645K典型应用及引脚：